IndiumV3, Main, Repository, bibRecord, 003053

Electrical and Optical Characterization of Melt-Grown Bulk InAs1-yPy Crystals

Identifieur interne : 003053 ( Main/Repository ); précédent : 003052; suivant : 003054

Electrical and Optical Characterization of Melt-Grown Bulk InAs1-yPy Crystals

Auteurs : RBID : Pascal:11-0152874

Descripteurs français

Pascal (Inist)
- Propriété électronique, Propriété électrique, Polycristal, Composé III-V, Semiconducteur III-V, Arséniure d'indium, Méthode Bridgman, Croissance cristalline en phase fondue, Propriété optique, Composition chimique, Conductivité type n, Transmission optique, Spectre absorption, Mobilité porteur charge, Etat fondu, Phosphure d'indium, Indium Phosphoarséniure, Fluctuation, Spectre optique, Photoluminescence, Indice réfraction, Effet Hall, Croissance cristalline, Alliage ternaire, InP, InAs, InAsP, 7820, 8110F.

English descriptors

KwdEn :
- Absorption spectra, Bridgman method, Carrier mobility, Chemical composition, Crystal growth, Crystal growth from melts, Electrical properties, Electronic properties, Fluctuations, Hall effect, III-V compound, III-V semiconductors, Indium Arsenides phosphides, Indium arsenides, Indium phosphide, Melts, N type conductivity, Optical properties, Optical spectrum, Optical transmission, Photoluminescence, Polycrystals, Refractive index, Ternary alloys.

Abstract

Bulk ternary InAs_1-yP_y polycrystals with diameters up to 50 mm were grown from a pseudobinary InP-InAs melt using the vertical Bridgman technique. Electrical and optical properties were investigated as functions of alloy composition and sample temperature. As-grown undoped crystals have been found to exhibit n-type conductivity irrespective of alloy composition. Though the bulk InAs_1-yP_y substrates show high optical transmission out to long wavelengths as well as high carrier mobility, they exhibit random compositional fluctuations across the substrate area.

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Pascal:11-0152874

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electrical and Optical Characterization of Melt-Grown Bulk InAs<sub>1-y</sub>
P<sub>y</sub>
 Crystals</title>
<author><name sortKey="Wei, J" uniqKey="Wei J">J. Wei</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>General Dynamics Information Technology, 5100 Springfield Street</s1>
<s2>Dayton, OH 45431</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Dayton, OH 45431</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Barnes, J" uniqKey="Barnes J">J. Barnes</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>General Dynamics Information Technology, 5100 Springfield Street</s1>
<s2>Dayton, OH 45431</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Dayton, OH 45431</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Guha, S" uniqKey="Guha S">S. Guha</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Gonzalez, L P" uniqKey="Gonzalez L">L. P. Gonzalez</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Yeo, Y K" uniqKey="Yeo Y">Y. K. Yeo</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Hengehold, R L" uniqKey="Hengehold R">R. L. Hengehold</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><region type="state">Ohio</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Rajagopalan, G" uniqKey="Rajagopalan G">G. Rajagopalan</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>United Semiconductors, LLC, 7 University Place</s1>
<s2>Rensselaer, NY 12144</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Rensselaer, NY 12144</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0152874</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0152874 INIST</idno>
<idno type="RBID">Pascal:11-0152874</idno>
<idno type="wicri:Area/Main/Corpus">003448</idno>
<idno type="wicri:Area/Main/Repository">003053</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Bridgman method</term>
<term>Carrier mobility</term>
<term>Chemical composition</term>
<term>Crystal growth</term>
<term>Crystal growth from melts</term>
<term>Electrical properties</term>
<term>Electronic properties</term>
<term>Fluctuations</term>
<term>Hall effect</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium Arsenides phosphides</term>
<term>Indium arsenides</term>
<term>Indium phosphide</term>
<term>Melts</term>
<term>N type conductivity</term>
<term>Optical properties</term>
<term>Optical spectrum</term>
<term>Optical transmission</term>
<term>Photoluminescence</term>
<term>Polycrystals</term>
<term>Refractive index</term>
<term>Ternary alloys</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété électronique</term>
<term>Propriété électrique</term>
<term>Polycristal</term>
<term>Composé III-V</term>
<term>Semiconducteur III-V</term>
<term>Arséniure d'indium</term>
<term>Méthode Bridgman</term>
<term>Croissance cristalline en phase fondue</term>
<term>Propriété optique</term>
<term>Composition chimique</term>
<term>Conductivité type n</term>
<term>Transmission optique</term>
<term>Spectre absorption</term>
<term>Mobilité porteur charge</term>
<term>Etat fondu</term>
<term>Phosphure d'indium</term>
<term>Indium Phosphoarséniure</term>
<term>Fluctuation</term>
<term>Spectre optique</term>
<term>Photoluminescence</term>
<term>Indice réfraction</term>
<term>Effet Hall</term>
<term>Croissance cristalline</term>
<term>Alliage ternaire</term>
<term>InP</term>
<term>InAs</term>
<term>InAsP</term>
<term>7820</term>
<term>8110F</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Bulk ternary InAs<sub>1-y</sub>
P<sub>y</sub>
 polycrystals with diameters up to 50 mm were grown from a pseudobinary InP-InAs melt using the vertical Bridgman technique. Electrical and optical properties were investigated as functions of alloy composition and sample temperature. As-grown undoped crystals have been found to exhibit n-type conductivity irrespective of alloy composition. Though the bulk InAs<sub>1-y</sub>
P<sub>y</sub>
 substrates show high optical transmission out to long wavelengths as well as high carrier mobility, they exhibit random compositional fluctuations across the substrate area.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0>
</fA01>
<fA02 i1="01"><s0>JECMA5</s0>
</fA02>
<fA03 i2="1"><s0>J. electron. mater.</s0>
</fA03>
<fA05><s2>40</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Electrical and Optical Characterization of Melt-Grown Bulk InAs<sub>1-y</sub>
P<sub>y</sub>
 Crystals</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WEI (J.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BARNES (J.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GUHA (S.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>GONZALEZ (L. P.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>YEO (Y. K.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>HENGEHOLD (R. L.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>RAJAGOPALAN (G.)</s1>
</fA11>
<fA14 i1="01"><s1>Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>General Dynamics Information Technology, 5100 Springfield Street</s1>
<s2>Dayton, OH 45431</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson Air Force Base</s1>
<s2>OH 45433</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>United Semiconductors, LLC, 7 University Place</s1>
<s2>Rensselaer, NY 12144</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
</fA14>
<fA20><s1>103-108</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>15479</s2>
<s5>354000192003030010</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>20 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0152874</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Bulk ternary InAs<sub>1-y</sub>
P<sub>y</sub>
 polycrystals with diameters up to 50 mm were grown from a pseudobinary InP-InAs melt using the vertical Bridgman technique. Electrical and optical properties were investigated as functions of alloy composition and sample temperature. As-grown undoped crystals have been found to exhibit n-type conductivity irrespective of alloy composition. Though the bulk InAs<sub>1-y</sub>
P<sub>y</sub>
 substrates show high optical transmission out to long wavelengths as well as high carrier mobility, they exhibit random compositional fluctuations across the substrate area.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A10F</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70H20</s0>
</fC02>
<fC02 i1="03" i2="X"><s0>001D03C</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Propriété électronique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Electronic properties</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Propiedad electrónica</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Méthode Bridgman</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Bridgman method</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Croissance cristalline en phase fondue</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Crystal growth from melts</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Propriété optique</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Optical properties</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composition chimique</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Chemical composition</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Conductivité type n</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>N type conductivity</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Conductividad tipo n</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Transmission optique</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Optical transmission</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Transmisión óptica</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Spectre absorption</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Absorption spectra</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Mobilité porteur charge</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Carrier mobility</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Etat fondu</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Melts</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Indium Phosphoarséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Indium Arsenides phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Fosfoarseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Fluctuation</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Fluctuations</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Spectre optique</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Optical spectrum</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Espectro óptico</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Indice réfraction</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Refractive index</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Effet Hall</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Hall effect</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>Croissance cristalline</s0>
<s5>34</s5>
</fC03>
<fC03 i1="23" i2="3" l="ENG"><s0>Crystal growth</s0>
<s5>34</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Alliage ternaire</s0>
<s5>35</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Ternary alloys</s0>
<s5>35</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>InAsP</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>7820</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>8110F</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>101</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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   |clé=     Pascal:11-0152874
   |texte=   Electrical and Optical Characterization of Melt-Grown Bulk InAs1-yPy Crystals
}}

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Electrical and Optical Characterization of Melt-Grown Bulk InAs1-yPy Crystals

Electrical and Optical Characterization of Melt-Grown Bulk InAs1-yPy Crystals

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